Capabilities In Our Lab
Synthesis
Atomic Layer Deposition (ALD)
Our group utilizes two ALD chambers, which can accommodate samples up to 3" and 4" silicon wafers. Both chambers permit various precursor chemistries, allowing for deposition of metal oxides such as Ti2O3 and Al2O3. Custom programming allows for precise control of precursor delivery, enabling growth of alloyed structures. Our 3" chamber is outfitted with a state of the art Fujikin precursor delivery system.
Nanowire Chemical Vapor Deposition (CVD) System
Our nanowire synthesis chamber is a rapid thermal CVD system, consisting of a load lock connected to a large, cold-walled quartz reaction chamber. The system can easily accommodate 4" and 6" wafers. Source gasses, which include GeH4, SiH4, SnCl4, HCl, B2H6, and PH3, allow for controlled growth of alloyed and doped group IV nanowires and epitaxial films.
Characterization
4-Point Probe
For measuring electrical properties of thin film and other samples, our lab has a 4-point probe station.
Photoluminescence
For characterizing optoelectronic Ge-Sn material synthesized in our nanowire CVD, our lab is equipped with an infrared (IR) photoluminescence (PL) system, consisting of a 980 nm IR laser and PbS detector sensitive to wavelengths out to about 2.6 μm.
Solar Simulator
For studies on the performance of energy materials such as solar water splitting cells, our group has a solar simulator.